共 50 条
- [43] GENERATION RATE OF POINT-DEFECTS IN SILICON IRRADIATED BY MEV IONS NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 80-1 : 583 - 586
- [44] ROLE OF DEFECT CHARGE STATE IN STABILITY OF POINT-DEFECTS IN SILICON BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1974, 19 (03): : 210 - 210
- [46] THE INTERACTION BETWEEN POINT-DEFECTS INTRODUCED BY IMPLANTATION AND DISLOCATIONS IN SILICON PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 76 (01): : 65 - 70