共 50 条
- [42] Calculation of rate constants for dissociative attachment of low-energy electrons to hydrogen halides HCl, HBr, and HI and their deuterated analogs Physical Review A - Atomic, Molecular, and Optical Physics, 2002, 66 (06): : 627021 - 627029
- [44] Silicon etching yields in F2, Cl2, Br2, and HBr high density plasmas JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 2001, 19 (05): : 2197 - 2206
- [45] DISSOCIATIVE ELECTRON-ATTACHMENT OF CH3BR ON GAAS(110) BY THERMALIZED PHOTOEXCITED SUBSTRATE ELECTRONS JOURNAL OF CHEMICAL PHYSICS, 1993, 98 (12): : 10085 - 10088
- [47] DISSOCIATIVE ATTACHMENT OF ELECTRONS IN IODINE .3. DISCUSSION PHYSICAL REVIEW, 1958, 109 (06): : 2012 - 2014
- [48] DISSOCIATIVE ATTACHMENT REACTIONS OF ELECTRONS WITH STRONG ACID MOLECULES JOURNAL OF CHEMICAL PHYSICS, 1986, 84 (12): : 6728 - 6731
- [49] Dissociative attachment of low-energy electrons to acetonitrile The European Physical Journal D, 2021, 75
- [50] Dissociative attachment of low-energy electrons to acetonitrile EUROPEAN PHYSICAL JOURNAL D, 2021, 75 (08):