PHOTO-FIELD IONIZATION OF DEEP CENTERS IN SEMICONDUCTORS WITH COULOMB ACTION TAKEN INTO ACCOUNT

被引：0

作者：

ROZNERITSA, YA ^{[1
]}

PRODAN, VD ^{[1
]}

机构：

[1] KISHINEV POLYTECH INST,KISHINEV,MOSSR

来源：

IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA | 1977年 / 12期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：85 / 92

页数：8

共 46 条

[31] ELECTRON-DRAG CURRENT IN THE CASE OF 2-PHOTON IONIZATION OF DEEP IMPURITY CENTERS IN SEMICONDUCTORS
IMAMOV, EZ
KREVCHIK, VD
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (08): : 887 - 889
[32] IONIZATION MECHANISMS OF SHALLOW DONOR IMPURITY CENTERS IN SEMICONDUCTORS IN AN EXTERNAL ELECTRIC FIELD WITH ALLOWANCE FOR PLASMA SCREENING
KATANA, PK
TIRON, SD
CHEBAN, AG
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 4 (02): : 210 - +
[33] Effect of spin-orbit interaction on tunnel ionization of deep centers in electric field
Yassievich, IN
Perel, VI
PHYSICA B-CONDENSED MATTER, 2003, 340 : 496 - 498
[34] FIELD-ENHANCED CARRIER-GENERATION EFFECT OF DEEP-LEVEL CENTERS IN SEMICONDUCTORS
DING, KB
ZHANG, XM
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1993, 57 (06): : 529 - 532
[35] EFFECT OF ELECTRON-PHONON INTERACTION ON THE IONIZATION OF DEEP CENTERS BY A STRONG ELECTRIC-FIELD
KARPUS, V
JETP LETTERS, 1986, 44 (07) : 430 - 433
[36] 2 ELECTRIC-FIELD SCREENING-MODES IN HIGH-RESISTIVITY SEMICONDUCTORS WITH DEEP CENTERS
ASTRATOV, VN
ILINSKII, AV
FURMAN, AS
FIZIKA TVERDOGO TELA, 1989, 31 (08): : 212 - 220
[37] Field-enhanced ionization of deep-level centers as a triggering mechanism for superfast impact ionization fronts in Si structures
Rodin, P
Rodina, A
Grekhov, I
JOURNAL OF APPLIED PHYSICS, 2005, 98 (09)
[38] Field-enhanced ionization of deep-level centers as a triggering mechanism for superfast impact ionization fronts in Si structures
Rodin, Pavel
Rodina, Anna
Grekhov, Igor
Journal of Applied Physics, 2005, 98 (09):
[39] ELECTRIC-FIELD-INDUCED PHONON-ASSISTED TUNNEL IONIZATION FROM DEEP LEVELS IN SEMICONDUCTORS
MAKRAMEBEID, S
LANNOO, M
PHYSICAL REVIEW LETTERS, 1982, 48 (18) : 1281 - 1284
[40] FIELD-IONIZATION OF DEEP CENTERS IN THERMIC SILICON DIOXIDE OF SI-SIO2 STRUCTURES
MIKHAILOVSKII, IP
EPOV, AE
PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1984, 10 (07): : 416 - 419

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