SINGLE-PARAMETER SCALING AND CONDUCTANCE OF 2D SYSTEMS AT THE SILICON SURFACE

被引：0
|
作者：
DOROZHKIN, SI [1 ]
KVON, ZD [1 ]
OLSHANETSKII, EB [1 ]
GUSEV, GM [1 ]
机构：
[1] ACAD SCI USSR,INST SEMICOND PHYS,NOVOSIBIRSK,USSR
来源：
JETP LETTERS | 1987年 / 45卷 / 12期
关键词：
D O I：
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中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
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页码：737 / 739
页数：3
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