SINGLE-PARAMETER SCALING AND CONDUCTANCE OF 2D SYSTEMS AT THE SILICON SURFACE

被引：0

作者：

DOROZHKIN, SI ^{[1
]}

KVON, ZD ^{[1
]}

OLSHANETSKII, EB ^{[1
]}

GUSEV, GM ^{[1
]}

机构：

[1] ACAD SCI USSR,INST SEMICOND PHYS,NOVOSIBIRSK,USSR

来源：

JETP LETTERS | 1987年 / 45卷 / 12期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：737 / 739

页数：3

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