PHOTOADMITTANCE IN AMORPHOUS-SILICON SCHOTTKY DIODES

被引：0

作者：

DRAZIN, JPV ^{[1
]}

ANDERSON, JC ^{[1
]}

机构：

[1] UNIV LONDON IMPERIAL COLL SCI & TECHNOL,DEPT ELECT ENGN,LONDON SW7 2BT,ENGLAND

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1986年 / 54卷 / 01期

关键词：

D O I：

10.1080/13642818608243175

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：19 / 36

页数：18

共 50 条

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