共 50 条
- [21] THE CHARACTERISTICS OF HIGH-CURRENT AMORPHOUS-SILICON DIODESAPPLIED PHYSICS, 1980, 21 (04): : 307 - 311GIBSON, RALECOMBER, PGSPEAR, WE
- [22] PROTON AND NEUTRON DAMAGE IN THICK AMORPHOUS-SILICON DIODESAMORPHOUS SILICON TECHNOLOGY - 1989, 1989, 149 : 655 - 659HOLLINGSWORTH, REXI, JMADAN, ACECIL, FE
- [23] CHARACTERISTICS OF THE SPECTRAL SENSITIVITY OF SCHOTTKY BARRIERS ON HYDRATED AMORPHOUS-SILICONSOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (10): : 1194 - 1195ANDREEV, AAGILMAN, BIFEOKTISTOV, NAFLORINSKII, VYTERUKOV, EI
- [24] MORE THEORY OF THE ADMITTANCE OF AN AMORPHOUS-SILICON SCHOTTKY-BARRIERPHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1986, 54 (05): : 421 - 438ARCHIBALD, IWABRAM, RA
- [25] MECHANISM OF PHOTOCURRENT MULTIPLICATION IN AMORPHOUS-SILICON CARBIDE SCHOTTKY CELLSJOURNAL OF APPLIED PHYSICS, 1995, 77 (03) : 1120 - 1125AKITA, SUEDA, HNAKAYAMA, Y
- [26] 1/F NOISE IN AMORPHOUS-SILICON NIP AND PIN DIODESJOURNAL OF APPLIED PHYSICS, 1995, 77 (07) : 3300 - 3307WIECZOREK, H
- [27] OBSERVATION OF SINGLE MINIMUM IONIZING PARTICLES WITH AMORPHOUS-SILICON DIODESNUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1991, 305 (03) : 512 - 516ALEKSAN, RBOLOGNESE, TEQUER, BKARAR, AREYMOND, JM
- [28] HYDROGENATED AMORPHOUS-SILICON PIN DIODES WITH HIGH RECTIFICATION RATIOJOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) : 1179 - 1182SEKI, KYAMAMOTO, HSASANO, ATSUKADA, T
- [29] AMORPHOUS-SILICON GERMANIUM-DIODES FOR OPTICAL-DETECTIONJOURNAL OF NON-CRYSTALLINE SOLIDS, 1989, 115 (1-3) : 186 - 188DEIMEL, PPHEIMHOFER, BKROTZ, GMULLER, GWIND, J
- [30] CARRIER COLLECTION EFFICIENCY OF SCHOTTKY DIODES ON TRIODE DC SPUTTERED HYDROGENATED AMORPHOUS-SILICON - TRANSPORT-PROPERTIES OF HOLESJOURNAL OF APPLIED PHYSICS, 1984, 56 (10) : 2806 - 2811ARENE, EBAIXERAS, JMENCARAGLIA, D