SIMPLE TECHNIQUE FOR DETERMINATION OF CENTROID OF NITRIDE CHARGE IN MNOS STRUCTURES

被引：40
作者：
MAES, H [1 ]
VANOVERSTRAETEN, RJ [1 ]
机构：
[1] KATHOLIEKE UNIV LEUVEN,LAB FYS & ELEKTR HALFGELEIDERS,KARDINAAL,3030 HEVERLE,BELGIUM
来源：
APPLIED PHYSICS LETTERS | 1975年 / 27卷 / 05期
关键词：
D O I：
10.1063/1.88446
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：282 / 284
页数：3
相关论文
共 8 条
[1]   MEASUREMENT OF LOW DENSITIES OF SURFACE STATES AT SI-SIO2-INTERFACE [J].
DECLERCK, G ;
VANOVERS.R ;
BROUX, G .
SOLID-STATE ELECTRONICS, 1973, 16 (12) :1451-1460
[2]  
Dorda G., 1970, Physica Status Solidi A, V1, P71, DOI 10.1002/pssa.19700010109
[3]   PROPERTIES OF MNOS STRUCTURES [J].
LUNDSTRO.KI ;
SVENSSON, CM .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (06) :826-&
[4]   LOW-FIELD TUNNELLING CURRENT IN THIN-OXIDE MNOS MEMORY TRANSISTORS [J].
MAES, H ;
VANOVERS.R .
ELECTRONICS LETTERS, 1973, 9 (02) :19-21
[5]  
MAES H, 1974, THESIS KATHOLIEKE U
[6]  
ROSS EC, 1969, RCA REV, V30, P366
[7]   CHARACTERIZATION OF THIN OXIDE MNOS MEMORY TRANSISTORS [J].
WHITE, MH ;
CRICCHI, JR .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (12) :1280-&
[8]   MEASUREMENTS OF CHARGE PROPAGATION IN SI3N4 FILMS [J].
YUN, BH .
APPLIED PHYSICS LETTERS, 1974, 25 (06) :340-342
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