SEMICONDUCTOR-DEVICES SUITABLE FOR USE IN CRYOGENIC ENVIRONMENTS

被引:92
作者
LENGELER, B [1 ]
机构
[1] KERN FORSCH ANLAGE JULICH, INST FESTKORPER FORSCH, 517 JULICH, WEST GERMANY
关键词
D O I
10.1016/0011-2275(74)90206-9
中图分类号
O414.1 [热力学];
学科分类号
摘要
引用
收藏
页码:439 / 447
页数:9
相关论文
共 41 条
[1]   SURFACE STATES AND 1/F NOISE IN MOS TRANSISTORS [J].
ABOWITZ, G ;
ARNOLD, E ;
LEVENTHA.EA .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (11) :775-+
[2]  
AIGRIN P, 1961, SELECTED CONSTANTS R
[3]  
AZAROFF LV, 1963, ELECTRONIC PROCESSES, pCH8
[4]  
Barton L. E., 1962, ELECTRONICS, V35, P38
[5]  
BEATTIE RA, 1959, P ROY SOC LONDON, VA249, P16
[6]   THE THERMAL CONDUCTIVITY OF GERMANIUM AND SILICON BETWEEN 2-DEGREES-K AND 300-DEGREES-K [J].
CARRUTHERS, JA ;
GEBALLE, TH ;
ROSENBERG, HM ;
ZIMAN, JM .
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1957, 238 (1215) :502-514
[7]   MAGNETIC SUSCEPTIBILITY MEASUREMENTS WITH A TUNNEL DIODE OSCILLATOR [J].
CLOVER, RB ;
WOLF, WP .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1970, 41 (05) :617-&
[8]   ELECTRICAL PROPERTIES OF N-TYPE GERMANIUM [J].
DEBYE, PP ;
CONWELL, EM .
PHYSICAL REVIEW, 1954, 93 (04) :693-706
[9]  
EDMOND JT, 1956, SEMICONDUCTOR M REPO, P109
[10]  
ELAD E, 1968, THESIS U CALIFORNIA