INGAAS-ALGAAS-GAAS STRAINED-LAYER QUANTUM-WELL HETEROSTRUCTURE SQUARE RING LASERS

被引：20

作者：

HAN, H

FORBES, DV

COLEMAN, JJ

机构：

[1] Microelectronics Laboratory, Material Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1995年 / 31卷 / 11期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/3.469280

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The processing end optical characteristics of an Ingaas-AlGaAs-GaAs strained-layer quantum-well heterostructure square ring laser (4 mu m width and 50-mu m/side length) with two output waveguides and two narrow physical gap couplers are described. The ridges and the total internal reflection (TIR) mirrors of the square ring lasers are fabricated by two photolithographic steps with a single SiO2 mask and planarized with polyimide such that the TIR mirrors are etched through the active region while the ridge waveguides are not Single longitudinal mode operation is observed with a side mode suppression ratio of 20 dB, Asymmetric characteristics of emission spectra from the two output waveguides demonstrates that the square ring lasers operate in traveling wave modes.

引用

页码：1994 / 1997

页数：4