SATURATION AND VOLTAGE QUENCHING OF THE POROUS SILICON LUMINESCENCE AND IMPORTANCE OF THE AUGER EFFECT

被引：2

作者：

ROMESTAIN, R ^{[1
]}

VIAL, JC ^{[1
]}

MIHALCESCU, I ^{[1
]}

BSIESY, A ^{[1
]}

机构：

[1] CNRS,F-38041 GRENOBLE,FRANCE

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1995年 / 190卷 / 01期

关键词：

D O I：

10.1002/pssb.2221900112

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Two important observations for porous silicon, the saturation and the voltage selective quenching of the photoluminescence, are presented. Their similarities are pointed out and discussed in two phenomenological models, the saturation of the absorption and an Auger effect. The consequences of carrier accumulation in quantum crystallites are emphasized in both cases.

引用

页码：77 / 84

页数：8

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