ASYMMETRIC DARK CURRENT IN QUANTUM-WELL INFRARED PHOTODETECTORS

被引：6

作者：

TSAI, KL ^{[1
]}

LEE, CP ^{[1
]}

CHANG, KH ^{[1
]}

LIU, DC ^{[1
]}

CHEN, HR ^{[1
]}

TSANG, JS ^{[1
]}

机构：

[1] NATL CHIAO TUNG UNIV,INST ELECTR,HSINCHU,TAIWAN

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 18期

关键词：

D O I：

10.1063/1.111591

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Asymmetric dark current versus voltage characteristics in quantum weil infrared photodetectors have been studied. A model based on asymmetrical potential barriers was proposed. The asymmetrical potential barriers, which are most likely due to the accumulation of oxygen impurities at one of the interfaces, cause the asymmetrical I-V characteristics. The height of the potential spike is found to increase with the Al content in the AlGaAs barriers. Calculations based on our model agree well with experimental results.

引用

收藏

页码：2436 / 2438

页数：3

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