INTERFACE QUANTUM-WELL STATES OBSERVED BY 3-WAVE MIXING IN ZNSE/GAAS HETEROSTRUCTURES

被引：57

作者：

YEGANEH, MS ^{[1
]}

QI, J ^{[1
]}

YODH, AG ^{[1
]}

TAMARGO, MC ^{[1
]}

机构：

[1] BELLCORE,RED BANK,NJ 07701

来源：

PHYSICAL REVIEW LETTERS | 1992年 / 68卷 / 25期

关键词：

D O I：

10.1103/PhysRevLett.68.3761

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Three-wave mixing was used to spectroscopically probe the interface electronic structure of a buried ZnSe/GaAs(001) heterointerface from 1.3 to 4.3 eV. An unusual resonance at 2.72 eV was observed and assigned to a virtual transition between the valence band of ZnSe and a quantum well state at the buried heterointerface. This assignment was confirmed by experiments that combine three-wave mixing with photoinduced band bending. The experiments also indicate the resonance may be a useful probe of defects at the buried interface.

引用

页码：3761 / 3764

页数：4

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