INTERFACE QUANTUM-WELL STATES OBSERVED BY 3-WAVE MIXING IN ZNSE/GAAS HETEROSTRUCTURES

被引:57
作者
YEGANEH, MS [1 ]
QI, J [1 ]
YODH, AG [1 ]
TAMARGO, MC [1 ]
机构
[1] BELLCORE,RED BANK,NJ 07701
关键词
D O I
10.1103/PhysRevLett.68.3761
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Three-wave mixing was used to spectroscopically probe the interface electronic structure of a buried ZnSe/GaAs(001) heterointerface from 1.3 to 4.3 eV. An unusual resonance at 2.72 eV was observed and assigned to a virtual transition between the valence band of ZnSe and a quantum well state at the buried heterointerface. This assignment was confirmed by experiments that combine three-wave mixing with photoinduced band bending. The experiments also indicate the resonance may be a useful probe of defects at the buried interface.
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页码:3761 / 3764
页数:4
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