PROPERTIES OF VAPOR-DEPOSITED ALUMINUM ARSENIDE

被引：16

作者：

SIGAI, AG

ABRAHAMS, MS

BLANC, J

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1972年 / 119卷 / 07期

关键词：

D O I：

10.1149/1.2404375

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：952 / &

共 18 条

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[16] PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED EPITAXIAL GAAS1-XPX USING ARSINE AND PHOSPHINE [J].

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