PROPERTIES OF VAPOR-DEPOSITED ALUMINUM ARSENIDE

被引：16

作者：

SIGAI, AG

ABRAHAMS, MS

BLANC, J

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1972年 / 119卷 / 07期

关键词：

D O I：

10.1149/1.2404375

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：952 / &

共 18 条

[1] STRESSES IN HETEROEPITAXIAL LAYERS - GAAS1-XPX ON GAAS [J].

ABRAHAMS, MS ;

WEISBERG, LR ;

TIETJEN, JJ .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (09) :3754-&

[2] STACKING FAULTS IN GAAS1-XPX ALLOYS [J].

ABRAHAMS, MS ;

TIETJEN, JJ .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1969, 30 (10) :2491-&

[3] TWINS AND STACKING FAULTS IN VAPOR GROWN GAAS [J].

ABRAHAMS, MS ;

BUIOCCHI, CJ .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (06) :927-&

[4] DISLOCATION MORPHOLOGY IN GRADED HETEROJUNCTIONS - GAAS1-XPX [J].

ABRAHAMS, MS ;

WEISBERG, LR ;

BUIOCCHI, CJ ;

BLANC, J .

JOURNAL OF MATERIALS SCIENCE, 1969, 4 (03) :223-&

[5]

ABRAHAMS MS, TO BE PUBLISHED

[6] DONOR SPECTROSCOPY IN GAAS [J].

BOSOMWORTH, DR ;

CRANDALL, RS ;

ENSTROM, RE .

PHYSICS LETTERS A, 1968, A 28 (05) :320-+

[7] SURFACE STRUCTURES AND PHOTOLUMINESCENCE OF MOLECULAR BEAM EPITAXIAL FILMS OF GAAS [J].

CHO, AY ;

HAYASHI, I .

SOLID-STATE ELECTRONICS, 1971, 14 (02) :125-&

[8] THERMAL EXPANSION OF ALAS [J].

ETTENBERG, M ;

PAFF, RJ .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (10) :3926-+

[9] VAPOR GROWTH AND PROPERTIES OF AIAS [J].

ETTENBERG, M ;

SIGAI, AG ;

DREEBEN, A ;

GILBERT, SL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (08) :1355-+

[10]

KRESSEL H, PRIVATE COMMUNICATIO

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