EPITAXIAL-GROWTH OF MGO ON (100)GAAS USING ULTRAHIGH-VACUUM ELECTRON-BEAM EVAPORATION

被引：64
作者：
HUNG, LS [1 ]
ZHENG, LR [1 ]
BLANTON, TN [1 ]
机构：
[1] EASTMAN KODAK CO,DIV ANALYT TECHNOL,ROCHESTER,NY 14652
来源：
APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 25期
关键词：
D O I：
10.1063/1.106745
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Epitaxial layers of MgO grown on (NH4)xS-treated (100)GaAs substrates were prepared by electron-beam evaporation in an ultrahigh vacuum system without introducing additional oxygen. The films deposited at 500-degrees-C were found to grow with stoichiometric composition and have (110) planar orientation. X-ray pole-figure analysis showed that the [110BAR] direction in the MgO(110) plane is parallel to the [011BAR] direction in the GaAs (100) plane with a 4: 3 coincident site lattice. The film surface was smooth with no signs of structural defects or microcracks.
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页码：3129 / 3131
页数：3
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