LOW-DIVERGENCE SINGLE-MODE RIDGE WAVE-GUIDE DIODE-LASERS

被引：7
|
作者：
HARDING, CM [1 ]
CHEN, YC [1 ]
DALBY, RJ [1 ]
WATERS, RG [1 ]
机构：
[1] CUNY HUNTER COLL,DEPT PHYS & ASTRON,NEW YORK,NY 10021
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 1991年 / 3卷 / 03期
关键词：
D O I：
10.1109/68.79752
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Ridge waveguide laser diodes of a GaAs-AlGaAs separate-confinement graded-index monolithically stacked triple quantum-well structure have been fabricated. Results for 4-mu-m-wide by 600-mu-m-long optically coated devices are presented. Single-longitudinal mode, CW output power in excess of 90 mW, and a far-field divergence of 21-degrees x 3.5-degrees is demonstrated.
引用
收藏
页码：199 / 201
页数：3
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