PHOTOREFLECTANCE STUDY OF SURFACE FERMI LEVEL IN GAAS AND GAALAS

被引：141
作者：
SHEN, H
DUTTA, M
FOTIADIS, L
NEWMAN, PG
MOERKIRK, RP
CHANG, WH
SACKS, RN
机构：
[1] USA,ELECTR TECHNOL & DEVICES LAB,SLCET-ED,FT MONMOUTH,NJ 07703
[2] UNITED TECHNOL RES CTR,E HARTFORD,CT 06108
来源：
APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 20期
关键词：
D O I：
10.1063/1.103916
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Franz-Keldysh oscillations from GaAs and AlGaAs structures have been studied and we find that the electric field obtained from the oscillations is in agreement with that derived from electrostatic calculations. Our results show that illumination from pump and probe beams in a normal photoreflectance experiment can significantly affect the measurement and thus erroneously lead to a reduced value of the electric field. The Fermi level on the bare surface of AlGaAs with different Al mole fraction has also been determined.
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页码：2118 / 2120
页数：3
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