PREPARATION AND SOME PHYSICAL PROPERTIES OF BI2TE3, SB2TE3, AND AS2TE3

[1] AINSWORTH L, 1956, P PHYS SOC LOND B, V69

[2] IMPURITY BAND CONDUCTION IN GERMANIUM AND SILICON [J]. PHYSICAL REVIEW, 1956, 103 (01): : 51 - 60

[3] HERSTELLUNG UND ELEKTRISCHE EIGENSCHAFTEN VON INP UND GAAS [J]. ZEITSCHRIFT FUR NATURFORSCHUNG PART A-ASTROPHYSIK PHYSIK UND PHYSIKALISCHE CHEMIE, 1955, 10 (08): : 615 - 619

[4] ELECTRICAL PROPERTIES OF GERMANIUM SEMICONDUCTORS AT LOW TEMPERATURES [J]. PHYSICAL REVIEW, 1955, 99 (02): : 406 - 419

[5] FRONDEL C, 1939, AM MIN, V24, P12

[6] Goldsmid H. J., 1955, J ELECTRONICS, V1, P218, DOI DOI 10.1080/00207215508961410

[7] THE THERMAL CONDUCTIVITY OF BISMUTH TELLURIDE [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1956, 69 (02): : 203 - 209

[8] HARMAN TC, 1956, J ELECTROCHEM SOC, V103, P126

[9] HARMAN TC, 1956, FALL M EL CHEM SOC

[10] HARMAN TC, 1956, PHYS REV, V104

[1] AINSWORTH L, 1956, P PHYS SOC LOND B, V69

[2] IMPURITY BAND CONDUCTION IN GERMANIUM AND SILICON [J]. PHYSICAL REVIEW, 1956, 103 (01): : 51 - 60

[3] HERSTELLUNG UND ELEKTRISCHE EIGENSCHAFTEN VON INP UND GAAS [J]. ZEITSCHRIFT FUR NATURFORSCHUNG PART A-ASTROPHYSIK PHYSIK UND PHYSIKALISCHE CHEMIE, 1955, 10 (08): : 615 - 619

[4] ELECTRICAL PROPERTIES OF GERMANIUM SEMICONDUCTORS AT LOW TEMPERATURES [J]. PHYSICAL REVIEW, 1955, 99 (02): : 406 - 419

[5] FRONDEL C, 1939, AM MIN, V24, P12

[6] Goldsmid H. J., 1955, J ELECTRONICS, V1, P218, DOI DOI 10.1080/00207215508961410

[7] THE THERMAL CONDUCTIVITY OF BISMUTH TELLURIDE [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1956, 69 (02): : 203 - 209

[8] HARMAN TC, 1956, J ELECTROCHEM SOC, V103, P126

[9] HARMAN TC, 1956, FALL M EL CHEM SOC

[10] HARMAN TC, 1956, PHYS REV, V104