Spatial distribution of electroluminescence in ZnSe diodes with epitaxial I layer

被引：1
作者：
Jones, APC
Brinkman, AW
Russell, GJ
Woods, J
Wright, PJ
Cockayne, B
机构：
[1] Univ Durham, Sci Labs, Dept Appl Phys & Elect, Durham DH1 3LE, England
[2] Royal Signals & Radar Estab, Great Malvern WR14 3PS, Worcs, England
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1986年 / 1卷 / 01期
关键词：
D O I：
10.1088/0268-1242/1/1/004
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The fabrication of a ZnSe light-emitting diode with an epitaxial ZnS I layer is described. The spatial distribution of injection electroluminescence from this device is superior to that from MIS diodes with polycrystalline I layers.
引用
收藏
页码：41 / 44
页数：4
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