FIELD-EFFECT TRANSISTORS USING BORON-DOPED DIAMOND EPITAXIAL-FILMS

被引：101

作者：

SHIOMI, H

NISHIBAYASHI, Y

FUJIMORI, N

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1989年 / 28卷 / 12期

关键词：

D O I：

10.1143/JJAP.28.L2153

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L2153 / L2154

页数：2

共 9 条

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