INFLUENCE OF SECOND VALENCE BAND AND OF CONDUCTION BAND ON THERMOELECTRIC FIGURE OF MERIT OF GERMANIUM TELLURIDE

被引:0
|
作者
SYSOEVA, LM
LEV, EY
KOLOMOET.NV
机构
来源
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1970年 / 3卷 / 09期
关键词
D O I
暂无
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:1099 / +
页数:1
相关论文
共 50 条
  • [41] High performance n-type bismuth telluride with highly stable thermoelectric figure of merit
    Yamashita, O
    Tomiyoshi, S
    JOURNAL OF APPLIED PHYSICS, 2004, 95 (11) : 6277 - 6283
  • [42] VALENCE BAND AND CONDUCTION-BAND SPECTRA OF TRANSITION-METAL DISULFIDES
    IWASAKI, Y
    ICHIKAWA, K
    AITA, O
    ASAMI, T
    TSUTSUMI, K
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 : 164 - 166
  • [43] High-performance bismuth-telluride compounds with highly stable thermoelectric figure of merit
    Yamashita, O
    Sugihara, S
    JOURNAL OF MATERIALS SCIENCE, 2005, 40 (24) : 6439 - 6444
  • [44] Thermoelectric figure-of-merit of metastable crystalline ST12 germanium allotrope
    Meng, Han
    Ohnishi, Masato
    An, Meng
    Shiomi, Junichiro
    MATERIALS TODAY PHYSICS, 2023, 38
  • [45] Thermoelectric Figure-of-Merit Calculations in Heavily Doped p-Type Lead Telluride
    Babenko, N. I.
    Dmitriev, A. V.
    MOSCOW UNIVERSITY PHYSICS BULLETIN, 2017, 72 (06) : 582 - 586
  • [46] VALENCE BAND STRUCTURE OF GERMANIUM-SILICON ALLOYS
    BRAUNSTEIN, R
    PHYSICAL REVIEW, 1963, 130 (03): : 869 - &
  • [47] VALENCE-BAND AND CONDUCTION-BAND STRUCTURE OF THE SAPPHIRE (1102) SURFACE
    GIGNAC, WJ
    WILLIAMS, RS
    KOWALCZYK, SP
    PHYSICAL REVIEW B, 1985, 32 (02): : 1237 - 1247
  • [48] ELECTRON MAGNETIC SUSCEPTIBILITY FOR GERMANIUM VALENCE BAND STRUCTURE
    GELMONT, BL
    SOVIET PHYSICS SOLID STATE,USSR, 1969, 11 (05): : 894 - +
  • [49] Enhanced orbital mixing in the valence band of strained germanium
    Bottegoni, F.
    Ferrari, A.
    Isella, G.
    Finazzi, M.
    Ciccacci, F.
    PHYSICAL REVIEW B, 2012, 85 (24):
  • [50] ANISOTROPY OF TUNNEL TRANSITIONS IN THE COMPLEX VALENCE BAND OF GERMANIUM
    GORBOVITSKII, BM
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (10): : 1201 - 1202