THE CHARACTERIZATION OF HIGH ELECTRON-MOBILITY TRANSISTORS USING SHUBNIKOV-DEHAAS OSCILLATIONS AND GEOMETRICAL MAGNETORESISTANCE MEASUREMENTS

被引：20

作者：

CHANG, CS

FETTERMAN, HR

VISWANATHAN, CR

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 02期

关键词：

D O I：

10.1063/1.343522

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：928 / 936

页数：9

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