FABRICATION OF FULLY SCALED 0.5-MU-M N-TYPE METAL-OXIDE SEMICONDUCTOR TEST DEVICES USING SYNCHROTRON X-RAY-LITHOGRAPHY - OVERLAY, RESIST PROCESSES, AND DEVICE FABRICATION

被引：32

作者：

SILVERMAN, JP ^{[1
]}

DIMILIA, V ^{[1
]}

KATCOFF, D ^{[1
]}

KWIETNIAK, K ^{[1
]}

SEEGER, D ^{[1
]}

WANG, LK ^{[1
]}

WARLAUMONT, JM ^{[1
]}

WILSON, AD ^{[1
]}

CROCKATT, D ^{[1
]}

DEVENUTO, R ^{[1
]}

HILL, B ^{[1
]}

HSIA, LC ^{[1
]}

RIPPSTEIN, R ^{[1
]}

机构：

[1] IBM CORP,DIV GEN TECHNOL,HOPEWELL JUNCTION,NY 12533

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 06期

关键词：

D O I：

10.1116/1.584104

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2147 / 2152

页数：6

共 10 条

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