CHLORINE CONCENTRATION PROFILES IN O2-HCL AND H2O-HCL THERMAL SILICON-OXIDES USING SIMS MEASUREMENTS

被引：31

作者：

DEAL, BE ^{[1
]}

HURRLE, A ^{[1
]}

SCHULZ, MJ ^{[1
]}

机构：

[1] FRAUNHOFER SOC,INST APPL SOLID STATE PHYS,D-7800 FREIBURG,FED REP GER

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1978年 / 125卷 / 12期

关键词：

D O I：

10.1149/1.2131356

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2024 / 2027

页数：4

共 17 条

[1]

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[2]

BUTLER SR, 1977, MAY EL SOC EXT ABSTR, P217

[3] THERMAL-OXIDATION KINETICS OF SILICON IN PYROGENIC H2O AND 5-PERCENT HCL-H2O MIXTURES [J].

DEAL, BE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (04) :576-579

[4] KINETICS OF THERMAL-OXIDATION OF SILICON IN O2/H2O AND O2/CL2 MIXTURES [J].

DEAL, BE ;

HESS, DW ;

PLUMMER, JD ;

HO, CP .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (02) :339-346

[5]

GIBBONS JF, 1975, PROJECTED RANGE STAT

[6] KINETICS OF THERMAL-OXIDATION OF SILICON IN O2-HCL MIXTURES [J].

HESS, DW ;

DEAL, BE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (05) :735-739

[7] KINETICS OF THERMAL GROWTH OF HCI-O2 OXIDES ON SILICON [J].

HIRABAYA.K ;

IWAMURA, J .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (11) :1595-1601

[8] CESIUM PROFILES IN SILICON AND IN SIO2-SI DOUBLE-LAYERS AS DETERMINED BY SIMS MEASUREMENTS [J].

HURRLE, A ;

SIXT, G .

APPLIED PHYSICS, 1975, 8 (04) :293-302

[9]

HURRLE A, 1975, THESIS U FREIBURG

[10] EFFECT OF HCL AND CL2 ON THERMAL OXIDATION OF SILICON [J].

KRIEGLER, RJ ;

CHENG, YC ;

COLTON, DR .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (03) :388-&

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