ELECTRON CORRELATION EFFECTS ON ANDERSON LOCALIZED STATES

被引：20
作者：
KAMIMURA, H
YAMAGUCHI, E
机构：
[1] Department of Physics, University of Tokyo, 113, Bunkyo-ku, Tokyo, Japan
来源：
SOLID STATE COMMUNICATIONS | 1978年 / 28卷 / 01期
关键词：
D O I：
10.1016/0038-1098(78)90342-3
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A theoretical model is presented to investigate the effects of electron correlation on the Anderson localized states, and the spin susceptibility and electronic specific heat are calculated. It is shown tha a remarkable effect of correlation in the intermediate region is to give rise to the Curie type behaviour at low temperatures in the spin susceptibility which otherwise obeys the Pauli law. It is further shown that the correlation effect on the T linear term in the specific heat is very small. © 1978.
引用
收藏
页码：127 / 131
页数：5
相关论文
共 14 条
[1]   ABSENCE OF DIFFUSION IN CERTAIN RANDOM LATTICES [J].
ANDERSON, PW .
PHYSICAL REVIEW, 1958, 109 (05) :1492-1505
[2]   DETERMINATION OF DONOR PAIR EXCHANGE ENERGY IN PHOSPHORUS-DOPED SILICON [J].
CULLIS, PR ;
MARKO, JR .
PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (02) :632-&
[3]   ELECTRON CORRELATIONS IN NARROW ENERGY BANDS .3. IMPROVED SOLUTION [J].
HUBBARD, J .
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1964, 281 (1384) :401-+
[4]   SPECIFIC-HEAT STUDY OF HEAVILY P-DOPED SI [J].
KOBAYASHI, N ;
IKEHATA, S ;
KOBAYASHI, S ;
SASAKI, W .
SOLID STATE COMMUNICATIONS, 1977, 24 (01) :67-70
[5]  
KOBAYASHI S, UNPUBLISHED
[6]   SPECIFIC-HEAT STUDIES OF HEAVILY DOPED SI DOUBLE-BOND P [J].
MARKO, JR ;
HARRISON, JP ;
QUIRT, JD .
PHYSICAL REVIEW B, 1974, 10 (06) :2448-2456
[7]  
Mott N. F., 1974, METAL INSULATOR TRAN
[8]   TRANSPORT IN DISORDERED MATERIALS [J].
MOTT, NF .
PHYSICAL REVIEW LETTERS, 1973, 31 (07) :466-467
[9]  
MOTT NF, 1971, ELECTRONIC PROCESSES
[10]   ELECTRONIC-STRUCTURE OF A D- CENTER IN MANY-VALLEY SEMICONDUCTORS [J].
NATORI, A ;
KAMIMURA, H .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1977, 43 (04) :1270-1279
12