NOISE TEMPERATURE IN GAAS EPI-LAYER FOR FETS

被引：5
作者：
GRAFFEUIL, J [1 ]
SAUTEREAU, JF [1 ]
BLASQUEZ, G [1 ]
ROSSEL, P [1 ]
机构：
[1] CNRS,AUTOMAT & ANAL SYST LAB,F-31055 TOULOUSE,FRANCE
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1978年 / 25卷 / 06期
关键词：
D O I：
10.1109/T-ED.1978.19142
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：596 / 599
页数：4
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