INSITU OBSERVATION OF DEFECT FORMATION IN CAF2(111) SURFACES INDUCED BY LOW-ENERGY ELECTRON-BOMBARDMENT

[1] STUDY OF SURFACE DISSOCIATION IN KCL AND LIF BY OBSERVATION OF PLASMON LOSSES ASSOCIATED WITH K AND LI [J]. SURFACE SCIENCE, 1975, 51 (02) : 504 - 512

[2] SPECTROSCOPIC STUDIES OF ALPHA-INDUCED RADIATION-DAMAGE IN DIVALENT METAL FLUORIDES [J]. JOURNAL OF PHYSICAL CHEMISTRY, 1982, 86 (20) : 4020 - 4025

[3] MBE-GROWN FLUORIDE FILMS - A NEW CLASS OF EPITAXIAL DIELECTRICS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 415 - 420

[4] Hobbs L., 1976, POINT DEFECT STABILI, V37, pC7, DOI [10.1051/jphyscol:1976702i, DOI 10.1051/JPHYSCOL:1976702]

[5] SILICON INSULATOR HETERO-EPITAXIAL STRUCTURES FORMED BY VACUUM DEPOSITION OF CAF2 AND SI [J]. APPLIED PHYSICS LETTERS, 1982, 40 (01) : 66 - 68

[6] KANEMARU S, UNPUB J APPL PHYS

[7] FORMATION OF A NEW ORDERED STRUCTURE OF CAF2/SI(111) BY ULTRAVIOLET-IRRADIATION [J]. PHYSICAL REVIEW LETTERS, 1986, 57 (10) : 1247 - 1250

[8] IMPROVEMENT OF SENSITIVITY OF ELECTRON-ENERGY LOSS SPECTROSCOPY [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (03): : L173 - L175

[9] LEE H, UNPUB APPL PHYS LETT

[10] ROLE OF SURFACE DEFECTS IN EPITAXIAL GROWTH OFSOME FCC METALS ON POTASSIUM CHLORIDE CLEAVED IN ULTRAHIGH VACUUM [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (10) : 4650 - &

[1] STUDY OF SURFACE DISSOCIATION IN KCL AND LIF BY OBSERVATION OF PLASMON LOSSES ASSOCIATED WITH K AND LI [J]. SURFACE SCIENCE, 1975, 51 (02) : 504 - 512

[2] SPECTROSCOPIC STUDIES OF ALPHA-INDUCED RADIATION-DAMAGE IN DIVALENT METAL FLUORIDES [J]. JOURNAL OF PHYSICAL CHEMISTRY, 1982, 86 (20) : 4020 - 4025

[3] MBE-GROWN FLUORIDE FILMS - A NEW CLASS OF EPITAXIAL DIELECTRICS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 415 - 420

[4] Hobbs L., 1976, POINT DEFECT STABILI, V37, pC7, DOI [10.1051/jphyscol:1976702i, DOI 10.1051/JPHYSCOL:1976702]

[5] SILICON INSULATOR HETERO-EPITAXIAL STRUCTURES FORMED BY VACUUM DEPOSITION OF CAF2 AND SI [J]. APPLIED PHYSICS LETTERS, 1982, 40 (01) : 66 - 68

[6] KANEMARU S, UNPUB J APPL PHYS

[7] FORMATION OF A NEW ORDERED STRUCTURE OF CAF2/SI(111) BY ULTRAVIOLET-IRRADIATION [J]. PHYSICAL REVIEW LETTERS, 1986, 57 (10) : 1247 - 1250

[8] IMPROVEMENT OF SENSITIVITY OF ELECTRON-ENERGY LOSS SPECTROSCOPY [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (03): : L173 - L175

[9] LEE H, UNPUB APPL PHYS LETT

[10] ROLE OF SURFACE DEFECTS IN EPITAXIAL GROWTH OFSOME FCC METALS ON POTASSIUM CHLORIDE CLEAVED IN ULTRAHIGH VACUUM [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (10) : 4650 - &