A REFINED SALICIDE (SELF-ALIGNED SILICIDE) TECHNOLOGY FOR CMOS PROCESSING

被引：0

作者：

NORSTROM, H ^{[1
]}

BUCHTA, R ^{[1
]}

LINDBERG, A ^{[1
]}

JOHANSSON, T ^{[1
]}

GUSTAFSSON, U ^{[1
]}

NYGREN, S ^{[1
]}

OSTLING, M ^{[1
]}

PETERSSON, CS ^{[1
]}

机构：

[1] INST MICROWAVE TECHNOL,S-10044 STOCKHOLM,SWEDEN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1987年 / 134卷 / 03期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：C123 / C124

页数：2

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