共 50 条
- [1] RADIATIVE INTERIMPURITY RECOMBINATION IN GERMANIUM SOVIET PHYSICS SOLID STATE,USSR, 1967, 8 (07): : 1689 - +
- [2] THERMAL QUENCHING OF INTERIMPURITY RADIATIVE RECOMBINATION IN GERMANIUM SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 2 (04): : 455 - &
- [3] INFLUENCE OF UNIAXIAL COMPRESSION ON INTERIMPURITY RADIATIVE RECOMBINATION IN GERMANIUM SOVIET PHYSICS SOLID STATE,USSR, 1967, 9 (05): : 1131 - +
- [4] INTERIMPURITY RADIATIVE RECOMBINATION IN HEAVILY DOPED COMPENSATED ZINC SELENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1986, 20 (02): : 237 - 238
- [5] INFLUENCE OF ION PAIR FORMATION ON INTERIMPURITY RADIATIVE RECOMBINATION IN GERMANIUM SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 2 (07): : 804 - &
- [6] INFLUENCE OF DEFORMATION ON INTERIMPURITY RECOMBINATION IN GERMANIUM SOVIET PHYSICS SOLID STATE,USSR, 1965, 7 (03): : 770 - +
- [8] IMPURITY AND INTERIMPURITY RADIATIVE RECOMBINATION IN SILICON SOVIET PHYSICS SOLID STATE,USSR, 1965, 7 (06): : 1478 - +
- [9] INTERIMPURITY RADIATIVE RECOMBINATION IN HEAVILY DOPED SEMICONDUCTORS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (07): : 752 - 759
- [10] ANTIMONY-COPPER INTERIMPURITY RECOMBINATION IN GERMANIUM SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 5 (05): : 784 - +