EFFECT OF HYDROGEN ON DISLOCATION DONOR AND ACCEPTOR STATES

[1] BENTON JL, 1980, APPL PHYS LETT, V36, P678

[2] NEGATIVE-U STATES IN GAP IN HYDROGENATED AMORPHOUS SILICON [J]. PHYSICAL REVIEW LETTERS, 1978, 41 (13) : 889 - 891

[3] INFRARED VIBRATIONAL-SPECTRA OF RF-SPUTTERED HYDROGENATED AMORPHOUS SILICON [J]. PHYSICAL REVIEW B, 1978, 18 (08): : 4288 - 4300

[4] INVESTIGATION OF THE DISLOCATION SPIN SYSTEM IN SILICON AS MODEL OF ONE-DIMENSIONAL SPIN CHAINS [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1981, 103 (02): : 519 - 528

[5] DEFECT STATES ASSOCIATED WITH DISLOCATIONS IN SILICON [J]. APPLIED PHYSICS LETTERS, 1979, 34 (01) : 73 - 75

[6] KVEDER K, UNPUB PHYS STAT SOL

[7] FAST CAPACITANCE TRANSIENT APPARATUS - APPLICATION TO ZNO AND O CENTERS IN GAP PARANORMAL JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3014 - 3022

[8] ON THE CORE STRUCTURE OF THE GLIDE-SET 9-DEGREES AND 3-DEGREES PARTIAL DISLOCATIONS IN SILICON [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1980, 100 (01): : 77 - 85

[9] FAST TRANSIENT CAPACITANCE MEASUREMENTS FOR IMPLANTED DEEP LEVELS IN SILICON [J]. APPLIED PHYSICS, 1975, 8 (01): : 35 - 42

[10] OSIPIAN YA, 1982, ZH EKSP TEOR FIZ+, V82, P509

[1] BENTON JL, 1980, APPL PHYS LETT, V36, P678

[2] NEGATIVE-U STATES IN GAP IN HYDROGENATED AMORPHOUS SILICON [J]. PHYSICAL REVIEW LETTERS, 1978, 41 (13) : 889 - 891

[3] INFRARED VIBRATIONAL-SPECTRA OF RF-SPUTTERED HYDROGENATED AMORPHOUS SILICON [J]. PHYSICAL REVIEW B, 1978, 18 (08): : 4288 - 4300

[4] INVESTIGATION OF THE DISLOCATION SPIN SYSTEM IN SILICON AS MODEL OF ONE-DIMENSIONAL SPIN CHAINS [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1981, 103 (02): : 519 - 528

[5] DEFECT STATES ASSOCIATED WITH DISLOCATIONS IN SILICON [J]. APPLIED PHYSICS LETTERS, 1979, 34 (01) : 73 - 75

[6] KVEDER K, UNPUB PHYS STAT SOL

[7] FAST CAPACITANCE TRANSIENT APPARATUS - APPLICATION TO ZNO AND O CENTERS IN GAP PARANORMAL JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3014 - 3022

[8] ON THE CORE STRUCTURE OF THE GLIDE-SET 9-DEGREES AND 3-DEGREES PARTIAL DISLOCATIONS IN SILICON [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1980, 100 (01): : 77 - 85

[9] FAST TRANSIENT CAPACITANCE MEASUREMENTS FOR IMPLANTED DEEP LEVELS IN SILICON [J]. APPLIED PHYSICS, 1975, 8 (01): : 35 - 42

[10] OSIPIAN YA, 1982, ZH EKSP TEOR FIZ+, V82, P509