MO-CVD GROWTH OF GAP AND GAA1P

被引：26

作者：

BENEKING, H

ROEHLE, H

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1981年 / 55卷 / 01期

关键词：

D O I：

10.1016/0022-0248(81)90274-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：79 / 86

页数：8

共 8 条

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JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) :147-157

[2] THE INFLUENCE OF AMMONIA ON THE GROWTH-RATE IN THE VAPOR-PHASE EPITAXY OF GALLIUM-PHOSPHIDE [J].

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[5] HETEROEPITAXIAL GROWTH OF GAP FILMS ON SI SUBSTRATES [J].

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BROADIE, RW .

JOURNAL OF CRYSTAL GROWTH, 1977, 37 (01) :13-22

[6] EPITAXIAL-GROWTH AND CHARACTERIZATION OF PYROLYTIC-GROWN GAAS1-XPX FOR ELECTROLUMINESCENT DIODES [J].

SAITOH, T ;

MINAGAWA, S .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (05) :656-659

[7] GROWTH AND PROPERTIES OF VPE GAP FOR GREEN LEDS [J].

STRINGFELLOW, GB ;

WEINER, ME ;

BURMEISTER, RA .

JOURNAL OF ELECTRONIC MATERIALS, 1975, 4 (02) :363-387

[8] 2-STAGE EPITAXIAL-GROWTH OF GAP ON SPINEL [J].

WANG, CC ;

LADANY, I ;

MCFARLANE, SH ;

DOUGHERTY, FC .

JOURNAL OF CRYSTAL GROWTH, 1974, 24 (OCT) :239-243

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