PHOTOCONDUCTIVITY OF AMORPHOUS-SEMICONDUCTORS

被引：27

作者：

STREET, RA

机构：

来源：

SOLID STATE COMMUNICATIONS | 1981年 / 39卷 / 02期

关键词：

D O I：

10.1016/0038-1098(81)90669-4

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：263 / 266

页数：4

共 14 条

[1] DRIFT MOBILITY AND PHOTOCONDUCTIVITY IN AMORPHOUS SILICON [J].

FUHS, W ;

MILLEVILLE, M ;

STUKE, J .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1978, 89 (02) :495-502

[2] DISPERSIVE TRANSPORT AND RECOMBINATION LIFETIME IN PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON [J].

HVAM, JM ;

BRODSKY, MH .

PHYSICAL REVIEW LETTERS, 1981, 46 (05) :371-374

[3]

MODDEL G, UNPUBLISHED

[4] NONGEMINATE RECOMBINATION OF ALPHA-SI-H [J].

MORT, J ;

CHEN, I ;

TROUP, A ;

MORGAN, M ;

KNIGHTS, J ;

LUJAN, R .

PHYSICAL REVIEW LETTERS, 1980, 45 (16) :1348-1351

[5]

MORT J, 1976, PHOTOCONDUCTIVITY RE, P213

[6]

ORENSTEIN J, UNPUBLISHED

[7] DISPERSIVE (NON-GAUSSIAN) TRANSIENT TRANSPORT IN DISORDERED SOLIDS [J].

PFISTER, G ;

SCHER, H .

ADVANCES IN PHYSICS, 1978, 27 (05) :747-798

[8]

Rose A, 1963, CONCEPTS PHOTOCONDUC

[9] THEORY OF PHOTOCONDUCTIVITY IN AMORPHOUS-SEMICONDUCTORS CONTAINING SLOWLY-VARYING TRAP DISTRIBUTIONS [J].

SIMMONS, JG ;

TAYLOR, GW .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1973, 6 (24) :3706-3718

[10] TEMPERATURE-DEPENDENCE OF PHOTOCONDUCTIVITY IN A-SI [J].

SPEAR, WE ;

LOVELAND, RJ ;

ALSHARBA.A .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1974, 15 (03) :410-422

← 1 2 →