ELECTRONIC-STRUCTURE OF THE AL-GAAS(110) SURFACE CHEMISORPTION SYSTEM

被引:43
作者
CHELIKOWSKY, JR
CHADI, DJ
COHEN, ML
机构
[1] UNIV OREGON,INST THEORET SCI,DEPT PHYS,EUGENE,OR 97403
[2] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
[3] UNIV CALIF BERKELEY,DEPT PHYS,BERKELEY,CA 94720
[4] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,DIV MAT & MOLEC RES,BERKELEY,CA 94720
来源
PHYSICAL REVIEW B | 1981年 / 23卷 / 08期
关键词
D O I
10.1103/PhysRevB.23.4013
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:4013 / 4022
页数:10
相关论文
共 40 条
[1]   METAL-SEMICONDUCTOR SURFACE AND INTERFACE STATES ON (110) GAAS [J].
BACHRACH, RZ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04) :1340-1343
[2]  
BACHRACH RZ, 1978, 14TH P INT C PHYS SE
[3]   CHEMISORPTION OF OXYGEN AND ALUMINUM ON THE GAAS (110) SURFACE FROM ABINITIO THEORY [J].
BARTON, JJ ;
SWARTS, CA ;
GODDARD, WA ;
MCGILL, TC .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (01) :164-168
[4]  
BRILLSON LJ, 1979, J VAC SCI TECHNOL, V16, P1137, DOI 10.1116/1.570177
[5]   CHEMICALLY-INDUCED CHARGE REDISTRIBUTION AT AL-GAAS INTERFACES [J].
BRILLSON, LJ ;
BACHRACH, RZ ;
BAUER, RS ;
MCMENAMIN, J .
PHYSICAL REVIEW LETTERS, 1979, 42 (06) :397-401
[6]   (110) SURFACE ATOMIC STRUCTURES OF COVALENT AND IONIC SEMICONDUCTORS [J].
CHADI, DJ .
PHYSICAL REVIEW B, 1979, 19 (04) :2074-2082
[7]   ENERGY-MINIMIZATION APPROACH TO ATOMIC GEOMETRY OF SEMICONDUCTOR SURFACES [J].
CHADI, DJ .
PHYSICAL REVIEW LETTERS, 1978, 41 (15) :1062-1065
[9]   CHEMISORPTION SITE GEOMETRY AND INTERFACE ELECTRONIC-STRUCTURE OF GA AND AL ON GAAS(110) [J].
CHADI, DJ ;
BACHRACH, RZ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1159-1163
[10]  
CHEILKOWSKY JR, 1975, SOLID STATE COMMUN, V17, P1103