HOPPING CONDUCTION IN A FREESTANDING GAAS-ALGAAS HETEROSTRUCTURE WIRE

被引：2

作者：

HASKO, DG ^{[1
]}

CLEAVER, JRA ^{[1
]}

AHMED, H ^{[1
]}

SMITH, CG ^{[1
]}

DIXON, JE ^{[1
]}

机构：

[1] EPI MAT LTD,CAMBRIDGE CB6 3NW,ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 20期

关键词：

D O I：

10.1063/1.109287

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the fabrication and electron transport in a novel heterostructure in which layers of AlGaAs and GaAs have been grown after a submicron free-standing GaAs wire has been formed. Electronic conduction at low temperatures in this material is shown to be consistent with three-dimensional hopping conduction with a transition to one-dimensional hopping at temperatures below 1 K.

引用

页码：2533 / 2535

页数：3

共 50 条

[31] TEMPERATURE DISTRIBUTIONS IN GAAS-ALGAAS DOUBLE-HETEROSTRUCTURE LASER BELOW AND ABOVE THRESHOLD CURRENT
KOBAYASHI, T
FURUKAWA, Y
JAPANESE JOURNAL OF APPLIED PHYSICS, 1975, 14 (12) : 1981 - 1986
[32] EVALUATION OF GAAS-ALGAAS DOUBLE-HETEROSTRUCTURE WAFERS AND LASERS BY X-RAY TOPOGRAPHY
SHINODA, Y
KAWAKAMI, T
JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (03) : 603 - 609
[33] MECHANISM OF AMPLIFICATION OF THE PHOTOCURRENT IN GAAS-ALGAAS STRUCTURES
KONNIKOV, SG
MASHEVSKII, AG
SINITSYN, MA
SOBOLEV, MM
YAVICH, BS
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1987, 21 (07): : 807 - 808
[34] Hole perpendicular transport in GaAs-AlGaAs superlattices
Dong, B
Lei, XL
APPLIED PHYSICS LETTERS, 1997, 70 (07) : 862 - 864
[35] EFFECTIVE MASSES OF HOLES AT GAAS-ALGAAS HETEROJUNCTIONS
BROIDO, DA
SHAM, LJ
PHYSICAL REVIEW B, 1985, 31 (02): : 888 - 892
[36] Fabrication of V-grooved inner stripe GaAs-AlGaAs quantum-wire lasers
Kim, TG
Hwang, SM
Kim, EK
Min, SK
Jeon, JI
Leem, SJ
Jeong, J
Park, JH
IEEE PHOTONICS TECHNOLOGY LETTERS, 1997, 9 (03) : 274 - 276
[37] RADIATIVE AND NONRADIATIVE RECOMBINATION IN GAAS-ALGAAS SUPERLATTICES
LAMBERT, B
SERMAGE, B
DEVEAUD, B
CLEROT, F
CHOMETTE, A
REGRENY, A
SURFACE SCIENCE, 1990, 228 (1-3) : 210 - 212
[38] GROUND IMPURITY LEVEL IN GAAS-ALGAAS SUPERLATTICES
IORIATTI, L
TSU, R
SURFACE SCIENCE, 1986, 174 (1-3) : 420 - 424
[39] CHARACTERISTICS OF RIB WAVEGUIDES IN GAAS-ALGAAS HETEROSTRUCTURES
SHELTON, JC
REINHART, FK
LOGAN, RA
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1979, 69 (10) : 1483 - 1483
[40] A polarization independent GaAs-AlGaAs electrooptic modulator
Spickermann, R
Peters, MG
Dagli, N
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1996, 32 (05) : 764 - 769

← 1 2 3 4 5 →