RESISTIVITY OF DOPED POLYCRYSTALLINE SILICON FILMS

被引：53

作者：

FRIPP, AL

SLACK, LH

机构：

[1] LANGLEY RES CTR,HAMPTON,VA 23365

[2] VIRGINIA POLYTECH INST & STATE UNIV,DEPT MET & CERAMICS,BLACKSBURG,VA 23601

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1973年 / 120卷 / 01期

关键词：

D O I：

10.1149/1.2403390

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：145 / 146

页数：2

共 12 条

[1] PREPARATION AND PROPERTIES OF AMORPHOUS SILICON [J].

CHITTICK, RC ;

ALEXANDE.JH ;

STERLING, HF .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (01) :77-&

[2] DEEP LEVELS WITHIN FORBIDDEN GAP OF SILICON-ON-SAPPHIRE FILMS [J].

DUMIN, DJ .

SOLID-STATE ELECTRONICS, 1970, 13 (04) :415-&

[3] SILICON GATE TECHNOLOGY [J].

FAGGIN, F ;

KLEIN, T .

SOLID-STATE ELECTRONICS, 1970, 13 (08) :1125-&

[4] STRUCTURE OF SILICON FILMS DEPOSITED ON OXIDIZED SILICON WAFERS [J].

FRIPP, AL ;

CATLIN, A ;

STERMER, RL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (12) :1569-&

[5] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J].

IRVIN, JC .

BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02) :387-+

[6] RESISTIVITY OF CHEMICALLY DEPOSITED POLYCRYSTALLINE SILICON FILMS [J].

JOSEPH, JD ;

KAMINS, TI .

SOLID-STATE ELECTRONICS, 1972, 15 (03) :355-&

[7] DIFFUSION OF IMPURITIES IN POLYCRYSTALLINE SILICON [J].

KAMINS, TI ;

MANOLIU, J ;

TUCKER, RN .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (01) :83-&

[8] THERMAL OXIDATION OF POLYCRYSTALLINE SILICON FILMS [J].

KAMINS, TI ;

MACKENNA, EL .

METALLURGICAL TRANSACTIONS, 1971, 2 (08) :2292-&

[9]

KAMINS TI, 1971, J APPL PHYS, V22, P4357

[10]

KOSONOCKY WF, 1971, IEEE J SOLID STATE C, VSC 6, P314

← 1 2 →