GROWTH OPTIMIZATION OF MOLECULAR-BEAM EPITAXY-GROWN INALAS ON INP

被引：15
|
作者：
CHOI, WY
FONSTAD, CG
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 02期
关键词：
D O I：
10.1116/1.587117
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effects of different molecular beam epitaxy (MBE) growth conditions on material qualities of In0.52Al0.48As on InP were investigated. Investigated parameters were growth temperature and As overpressure. A range of these two parameters within which InAlAs grows under the As-rich condition was first determined by reflection high-energy electron diffraction. Five different InAlAs samples were grown within this range and characterized by double crystal x-rav diffraction, Hall measurement, and photoluminescence. Based on the results of these characterizations, the optimal MBE growth condition for InAlAs was determined.
引用
收藏
页码：1013 / 1015
页数：3
相关论文
共 50 条
  • [41] InP/InAlAs resonant tunneling diodes grown by gas source molecular beam epitaxy
    Kawamura, Yuichi, 1733, (31):
  • [42] Excitation dependence of photoluminescence linewidth in InAlAs grown on InP substrates by molecular beam epitaxy
    Yoon, SF
    Radhakrishnan, K
    Du, Q
    THIN SOLID FILMS, 1997, 295 (1-2) : 310 - 314
  • [43] INITIAL GROWTH MODES OF INP LAYER GROWN BY MOLECULAR-BEAM EPITAXY AND MIGRATION-ENHANCED EPITAXY ON SI FILMS GROWN ON INP(100) SUBSTRATES
    MARUYAMA, H
    PAK, K
    YONEZU, H
    JOURNAL OF CRYSTAL GROWTH, 1994, 139 (1-2) : 19 - 26
  • [44] ELECTRON-MICROSCOPY STUDY OF MICROVOID GENERATION IN MOLECULAR-BEAM EPITAXY-GROWN SILICON
    PEROVIC, DD
    WEATHERLY, GC
    NOEL, JP
    HOUGHTON, DC
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (04): : 2034 - 2038
  • [45] MECHANISMS OF STRAIN RELEASE IN MOLECULAR-BEAM EPITAXY-GROWN INGAAS/GAAS BUFFER HETEROSTRUCTURES
    FERRARI, C
    FRANZOSI, P
    LAZZARINI, L
    SALVIATI, G
    BERTI, M
    DRIGO, AV
    MAZZER, M
    ROMANATO, F
    BRUNI, MR
    SIMEONE, MG
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1994, 28 (1-3): : 510 - 514
  • [46] Excitation dependence of photoluminescence linewidth in InAlAs grown on InP substrates by molecular beam epitaxy
    Du, QH
    Yoon, SF
    Radhakrishnan, K
    ICSE '96 - 1996 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS, 1996, : 148 - 153
  • [47] Minority carrier lifetime and noise in abrupt molecular-beam epitaxy-grown HgCdTe heterostructures
    R. Sewell
    C. A. Musca
    J. M. Dell
    L. Faraone
    K. Józwikowski
    A. Rogalski
    Journal of Electronic Materials, 2003, 32 : 639 - 645
  • [48] Threading and misfit-dislocation motion in molecular-beam epitaxy-grown HgCdTe epilayers
    Carmody, M
    Lee, D
    Zandian, M
    Phillips, J
    Arias, J
    JOURNAL OF ELECTRONIC MATERIALS, 2003, 32 (07) : 710 - 716
  • [49] HIGH-RESOLUTION X-RAY-DIFFRACTION OF INALAS/INP SUPERLATTICES GROWN BY GAS SOURCE MOLECULAR-BEAM EPITAXY
    CHANG, JCP
    CHIN, TP
    KAVANAGH, KL
    TU, CW
    APPLIED PHYSICS LETTERS, 1991, 58 (14) : 1530 - 1532
  • [50] EFFECT OF SURFACE STEPS AND NONSTOICHIOMETRY ON CRITICAL THICKNESS OF STRAINED INGAAS LAYERS GROWN BY MOLECULAR-BEAM EPITAXY ON INALAS/INP HETEROSTRUCTURES
    GENDRY, M
    DROUOT, V
    HOLLINGER, G
    MAHAJAN, S
    APPLIED PHYSICS LETTERS, 1995, 66 (01) : 40 - 42
12345