GROWTH OPTIMIZATION OF MOLECULAR-BEAM EPITAXY-GROWN INALAS ON INP

被引：15
作者：
CHOI, WY
FONSTAD, CG
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 02期
关键词：
D O I：
10.1116/1.587117
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effects of different molecular beam epitaxy (MBE) growth conditions on material qualities of In0.52Al0.48As on InP were investigated. Investigated parameters were growth temperature and As overpressure. A range of these two parameters within which InAlAs grows under the As-rich condition was first determined by reflection high-energy electron diffraction. Five different InAlAs samples were grown within this range and characterized by double crystal x-rav diffraction, Hall measurement, and photoluminescence. Based on the results of these characterizations, the optimal MBE growth condition for InAlAs was determined.
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页码：1013 / 1015
页数：3
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