首页
学术期刊
论文检测
AIGC检测
热点
更多
数据
SELF-ALIGNED BIPOLAR-TRANSISTORS FOR HIGH-PERFORMANCE AND LOW-POWER-DELAY VLSI
被引:84
|
作者
:
NING, TH
论文数:
0
引用数:
0
h-index:
0
NING, TH
ISAAC, RD
论文数:
0
引用数:
0
h-index:
0
ISAAC, RD
SOLOMON, PM
论文数:
0
引用数:
0
h-index:
0
SOLOMON, PM
TANG, DDL
论文数:
0
引用数:
0
h-index:
0
TANG, DDL
YU, HN
论文数:
0
引用数:
0
h-index:
0
YU, HN
FETH, GC
论文数:
0
引用数:
0
h-index:
0
FETH, GC
WIEDMANN, SK
论文数:
0
引用数:
0
h-index:
0
WIEDMANN, SK
机构
:
来源
:
IEEE TRANSACTIONS ON ELECTRON DEVICES
|
1981年
/ 28卷
/ 09期
关键词
:
D O I
:
10.1109/T-ED.1981.20476
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:1010 / 1013
页数:4
相关论文
共 50 条
[21]
SELF-ALIGNED A1INAS-GAINAS HETEROJUNCTION BIPOLAR-TRANSISTORS AND CIRCUITS
MISHRA, UK
论文数:
0
引用数:
0
h-index:
0
机构:
HUGHES RES LABS, MALIBU, CA 90265 USA
MISHRA, UK
JENSEN, JF
论文数:
0
引用数:
0
h-index:
0
机构:
HUGHES RES LABS, MALIBU, CA 90265 USA
JENSEN, JF
RENSCH, DB
论文数:
0
引用数:
0
h-index:
0
机构:
HUGHES RES LABS, MALIBU, CA 90265 USA
RENSCH, DB
BROWN, AS
论文数:
0
引用数:
0
h-index:
0
机构:
HUGHES RES LABS, MALIBU, CA 90265 USA
BROWN, AS
STANCHINA, WE
论文数:
0
引用数:
0
h-index:
0
机构:
HUGHES RES LABS, MALIBU, CA 90265 USA
STANCHINA, WE
TREW, RJ
论文数:
0
引用数:
0
h-index:
0
机构:
HUGHES RES LABS, MALIBU, CA 90265 USA
TREW, RJ
PIERCE, MW
论文数:
0
引用数:
0
h-index:
0
机构:
HUGHES RES LABS, MALIBU, CA 90265 USA
PIERCE, MW
KARGODORIAN, TV
论文数:
0
引用数:
0
h-index:
0
机构:
HUGHES RES LABS, MALIBU, CA 90265 USA
KARGODORIAN, TV
IEEE ELECTRON DEVICE LETTERS,
1989,
10
(10)
: 467
-
469
[22]
BASE ETCHED SELF-ALIGNED TRANSISTOR TECHNOLOGY FOR ADVANCED POLYEMITTER BIPOLAR-TRANSISTORS
KUMAR, MJ
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical and Computer Engineering, University of Waterloo, Waterloo
KUMAR, MJ
ROULSTON, DJ
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical and Computer Engineering, University of Waterloo, Waterloo
ROULSTON, DJ
ELECTRONICS LETTERS,
1994,
30
(10)
: 819
-
820
[23]
ELECTRON-BEAM DAMAGE OF SELF-ALIGNED SILICON BIPOLAR-TRANSISTORS AND CIRCUITS
JENKINS, KA
论文数:
0
引用数:
0
h-index:
0
机构:
COLUMBIA UNIV,DEPT ELECT ENGN,NEW YORK,NY 10027
COLUMBIA UNIV,DEPT ELECT ENGN,NEW YORK,NY 10027
JENKINS, KA
CRESSLER, JD
论文数:
0
引用数:
0
h-index:
0
机构:
COLUMBIA UNIV,DEPT ELECT ENGN,NEW YORK,NY 10027
COLUMBIA UNIV,DEPT ELECT ENGN,NEW YORK,NY 10027
CRESSLER, JD
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1991,
38
(06)
: 1450
-
1458
[24]
SELF-ALIGNED SUBSTITUTIONAL EMITTER PROCESS FOR GAAS/(GAAL)AS HETEROJUNCTION BIPOLAR-TRANSISTORS
CHANG, MF
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT CORP,CTR MICROELECTR RES & DEV,THOUSAND OAKS,CA 91360
ROCKWELL INT CORP,CTR MICROELECTR RES & DEV,THOUSAND OAKS,CA 91360
CHANG, MF
ASBECK, PM
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT CORP,CTR MICROELECTR RES & DEV,THOUSAND OAKS,CA 91360
ROCKWELL INT CORP,CTR MICROELECTR RES & DEV,THOUSAND OAKS,CA 91360
ASBECK, PM
MILLER, DL
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT CORP,CTR MICROELECTR RES & DEV,THOUSAND OAKS,CA 91360
ROCKWELL INT CORP,CTR MICROELECTR RES & DEV,THOUSAND OAKS,CA 91360
MILLER, DL
WANG, KC
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT CORP,CTR MICROELECTR RES & DEV,THOUSAND OAKS,CA 91360
ROCKWELL INT CORP,CTR MICROELECTR RES & DEV,THOUSAND OAKS,CA 91360
WANG, KC
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1985,
32
(11)
: 2547
-
2547
[25]
SELF-ALIGNED COMPLEMENTARY BIPOLAR-TRANSISTORS FABRICATED WITH A SELECTIVE-OXIDATION MASK
INOUE, M
论文数:
0
引用数:
0
h-index:
0
INOUE, M
MATSUZAWA, A
论文数:
0
引用数:
0
h-index:
0
MATSUZAWA, A
KANDA, A
论文数:
0
引用数:
0
h-index:
0
KANDA, A
SADAMATSU, H
论文数:
0
引用数:
0
h-index:
0
SADAMATSU, H
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1987,
34
(10)
: 2146
-
2152
[26]
FABRICATION OF SELF-ALIGNED GAAS/ALGAAS AND GAAS/INGAP MICROWAVE-POWER HETEROJUNCTION BIPOLAR-TRANSISTORS
REN, F
论文数:
0
引用数:
0
h-index:
0
机构:
MARTIN MARIETTA,ELECTR LAB,SYRACUSE,NY 13221
REN, F
LOTHIAN, JR
论文数:
0
引用数:
0
h-index:
0
机构:
MARTIN MARIETTA,ELECTR LAB,SYRACUSE,NY 13221
LOTHIAN, JR
PEARTON, SJ
论文数:
0
引用数:
0
h-index:
0
机构:
MARTIN MARIETTA,ELECTR LAB,SYRACUSE,NY 13221
PEARTON, SJ
ABERNATHY, CR
论文数:
0
引用数:
0
h-index:
0
机构:
MARTIN MARIETTA,ELECTR LAB,SYRACUSE,NY 13221
ABERNATHY, CR
WISK, PW
论文数:
0
引用数:
0
h-index:
0
机构:
MARTIN MARIETTA,ELECTR LAB,SYRACUSE,NY 13221
WISK, PW
FULLOWAN, TR
论文数:
0
引用数:
0
h-index:
0
机构:
MARTIN MARIETTA,ELECTR LAB,SYRACUSE,NY 13221
FULLOWAN, TR
TSENG, B
论文数:
0
引用数:
0
h-index:
0
机构:
MARTIN MARIETTA,ELECTR LAB,SYRACUSE,NY 13221
TSENG, B
CHU, SNG
论文数:
0
引用数:
0
h-index:
0
机构:
MARTIN MARIETTA,ELECTR LAB,SYRACUSE,NY 13221
CHU, SNG
CHEN, YK
论文数:
0
引用数:
0
h-index:
0
机构:
MARTIN MARIETTA,ELECTR LAB,SYRACUSE,NY 13221
CHEN, YK
YANG, LW
论文数:
0
引用数:
0
h-index:
0
机构:
MARTIN MARIETTA,ELECTR LAB,SYRACUSE,NY 13221
YANG, LW
FU, ST
论文数:
0
引用数:
0
h-index:
0
机构:
MARTIN MARIETTA,ELECTR LAB,SYRACUSE,NY 13221
FU, ST
BROZOVICH, RS
论文数:
0
引用数:
0
h-index:
0
机构:
MARTIN MARIETTA,ELECTR LAB,SYRACUSE,NY 13221
BROZOVICH, RS
LIN, HH
论文数:
0
引用数:
0
h-index:
0
机构:
MARTIN MARIETTA,ELECTR LAB,SYRACUSE,NY 13221
LIN, HH
HENNING, CL
论文数:
0
引用数:
0
h-index:
0
机构:
MARTIN MARIETTA,ELECTR LAB,SYRACUSE,NY 13221
HENNING, CL
HENRY, T
论文数:
0
引用数:
0
h-index:
0
机构:
MARTIN MARIETTA,ELECTR LAB,SYRACUSE,NY 13221
HENRY, T
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1994,
12
(05):
: 2916
-
2928
[27]
SUB-20 PS ECL CIRCUITS WITH HIGH-PERFORMANCE SUPER SELF-ALIGNED SELECTIVELY GROWN SIGE BASE (SSSB) BIPOLAR-TRANSISTORS
SATO, F
论文数:
0
引用数:
0
h-index:
0
机构:
NEC CORP LTD,MICROELECTR RES LABS,IBARAKI 305,OSAKA,JAPAN
NEC CORP LTD,MICROELECTR RES LABS,IBARAKI 305,OSAKA,JAPAN
SATO, F
HASHIMOTO, T
论文数:
0
引用数:
0
h-index:
0
机构:
NEC CORP LTD,MICROELECTR RES LABS,IBARAKI 305,OSAKA,JAPAN
NEC CORP LTD,MICROELECTR RES LABS,IBARAKI 305,OSAKA,JAPAN
HASHIMOTO, T
TATSUMI, T
论文数:
0
引用数:
0
h-index:
0
机构:
NEC CORP LTD,MICROELECTR RES LABS,IBARAKI 305,OSAKA,JAPAN
NEC CORP LTD,MICROELECTR RES LABS,IBARAKI 305,OSAKA,JAPAN
TATSUMI, T
TASHIRO, T
论文数:
0
引用数:
0
h-index:
0
机构:
NEC CORP LTD,MICROELECTR RES LABS,IBARAKI 305,OSAKA,JAPAN
NEC CORP LTD,MICROELECTR RES LABS,IBARAKI 305,OSAKA,JAPAN
TASHIRO, T
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1995,
42
(03)
: 483
-
488
[28]
HIGH-PERFORMANCE BIPOLAR-TRANSISTORS IN CMOS PROCESS
SULLIVAN, PA
论文数:
0
引用数:
0
h-index:
0
机构:
NCR MICROELECTR,FT COLLINS,CO 80525
SULLIVAN, PA
ELLSWORTH, DL
论文数:
0
引用数:
0
h-index:
0
机构:
NCR MICROELECTR,FT COLLINS,CO 80525
ELLSWORTH, DL
JIANG, XL
论文数:
0
引用数:
0
h-index:
0
机构:
NCR MICROELECTR,FT COLLINS,CO 80525
JIANG, XL
DENG, PD
论文数:
0
引用数:
0
h-index:
0
机构:
NCR MICROELECTR,FT COLLINS,CO 80525
DENG, PD
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1982,
29
(10)
: 1679
-
1680
[29]
GEMOW REFRACTORY OHMIC CONTACT FOR GAAS GAALAS SELF-ALIGNED HETEROJUNCTION BIPOLAR-TRANSISTORS
DUBONCHEVALLIER, C
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,LAB BAGNEAUX,F-92220 BAGNEUX,FRANCE
CTR NATL ETUD TELECOMMUN,LAB BAGNEAUX,F-92220 BAGNEUX,FRANCE
DUBONCHEVALLIER, C
BLANCONNIER, P
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,LAB BAGNEAUX,F-92220 BAGNEUX,FRANCE
CTR NATL ETUD TELECOMMUN,LAB BAGNEAUX,F-92220 BAGNEUX,FRANCE
BLANCONNIER, P
BESOURBES, C
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,LAB BAGNEAUX,F-92220 BAGNEUX,FRANCE
CTR NATL ETUD TELECOMMUN,LAB BAGNEAUX,F-92220 BAGNEUX,FRANCE
BESOURBES, C
MAYEAUX, C
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,LAB BAGNEAUX,F-92220 BAGNEUX,FRANCE
CTR NATL ETUD TELECOMMUN,LAB BAGNEAUX,F-92220 BAGNEUX,FRANCE
MAYEAUX, C
BRESSA, JF
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,LAB BAGNEAUX,F-92220 BAGNEUX,FRANCE
CTR NATL ETUD TELECOMMUN,LAB BAGNEAUX,F-92220 BAGNEUX,FRANCE
BRESSA, JF
HENOC, P
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,LAB BAGNEAUX,F-92220 BAGNEUX,FRANCE
CTR NATL ETUD TELECOMMUN,LAB BAGNEAUX,F-92220 BAGNEUX,FRANCE
HENOC, P
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1988,
135
(09)
: C450
-
C450
[30]
MICROWAVE PROPERTIES OF SELF-ALIGNED GAAS/ALGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS ON SILICON SUBSTRATES
FISCHER, R
论文数:
0
引用数:
0
h-index:
0
FISCHER, R
KLEM, J
论文数:
0
引用数:
0
h-index:
0
KLEM, J
PENG, CK
论文数:
0
引用数:
0
h-index:
0
PENG, CK
GEDYMIN, JS
论文数:
0
引用数:
0
h-index:
0
GEDYMIN, JS
MORKOC, H
论文数:
0
引用数:
0
h-index:
0
MORKOC, H
IEEE ELECTRON DEVICE LETTERS,
1986,
7
(02)
: 112
-
114
←
1
2
3
4
5
→