SUPER LOW-NOISE GAAS-MESFETS WITH A DEEP-RECESS STRUCTURE

被引：32
|
作者：
OHATA, K [1 ]
ITOH, H [1 ]
HASEGAWA, F [1 ]
FUJIKI, Y [1 ]
机构：
[1] NIPPON ELECT CO LTD,DIV MICROWAVE & SATELLITE COMMUN,MIDORI KU,YOKOHAMA,JAPAN
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 06期
关键词：
D O I：
10.1109/T-ED.1980.19982
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1029 / 1034
页数：6
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