SUPER LOW-NOISE GAAS-MESFETS WITH A DEEP-RECESS STRUCTURE

被引：32

作者：

OHATA, K ^{[1
]}

ITOH, H ^{[1
]}

HASEGAWA, F ^{[1
]}

FUJIKI, Y ^{[1
]}

机构：

[1] NIPPON ELECT CO LTD,DIV MICROWAVE & SATELLITE COMMUN,MIDORI KU,YOKOHAMA,JAPAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 06期

关键词：

D O I：

10.1109/T-ED.1980.19982

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1029 / 1034

页数：6

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[8]

LI C, 1979, 1978 S GAAS REL COMP, P353

[9] SUBMICRON SINGLE-GATE AND DUAL-GATE GAAS MESFETS WITH IMPROVED LOW-NOISE AND HIGH-GAIN PERFORMANCE [J].

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[10] IMPROVED NOISE PERFORMANCE OF GAAS MESFETS WITH SELECTIVELY ION-IMPLANTED N+ SOURCE REGIONS [J].

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IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (08) :1129-1130

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