NEW EMPIRICAL NONLINEAR MODEL FOR HEMT DEVICES

被引：7
作者：
ANGELOV, I
ZIRATH, H
机构：
[1] Chalmers University of Technology
来源：
ELECTRONICS LETTERS | 1992年 / 28卷 / 02期
关键词：
TRANSISTORS; SEMICONDUCTOR DEVICES AND MATERIALS;
D O I：
10.1049/el:19920087
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new large signal model for HEMTs, capable of modelling the current-voltage characteristic and its derivatives, including the characteristic transconductance peak, is described. Model parameter extraction is straightforward and is made for a submicrometre gatelength delta-doped pseudomorphic HEMT. Measured and modelled DC and S parameters are compared.
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页码：140 / 142
页数：3
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