ATOMIC LAYER EPITAXY OF INP

被引：19
|
作者：
BERTONE, D
机构：
[1] CSELT, Centro Studi e Laboratori Telecomunicazioni, Torino, 10148
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1992年 / 21卷 / 03期
关键词：
ATOMIC LAYER EPITAXY; INP; SELECTIVE AREA EPITAXY;
D O I：
10.1007/BF02660452
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work we will discuss the growth conditions for ALE of InP. Growth experiments were carried out in a LP-MOCVD system with a fast switch gas manifold. InP layers were deposited by pulsing TMIn and PH3, using Argon as carrier gas. A self limiting growth rate at 1 ML/cycle has been obtained with a substrate temperature as low as 320-360-degrees-C. InP epitaxial layers were grown on GaAs and InP substrates, and on GaInAs(P) layers previously deposited by conventional MOCVD. Selective area epitaxy on InP using a Si3N4 mask was also demonstrated. Results of this study are very encouraging for hybrid MOCVD/ALE growth of In-based compounds.
引用
收藏
页码：265 / 268
页数：4
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