ATOMIC LAYER EPITAXY OF INP

被引：19
|
作者：
BERTONE, D
机构：
[1] CSELT, Centro Studi e Laboratori Telecomunicazioni, Torino, 10148
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1992年 / 21卷 / 03期
关键词：
ATOMIC LAYER EPITAXY; INP; SELECTIVE AREA EPITAXY;
D O I：
10.1007/BF02660452
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work we will discuss the growth conditions for ALE of InP. Growth experiments were carried out in a LP-MOCVD system with a fast switch gas manifold. InP layers were deposited by pulsing TMIn and PH3, using Argon as carrier gas. A self limiting growth rate at 1 ML/cycle has been obtained with a substrate temperature as low as 320-360-degrees-C. InP epitaxial layers were grown on GaAs and InP substrates, and on GaInAs(P) layers previously deposited by conventional MOCVD. Selective area epitaxy on InP using a Si3N4 mask was also demonstrated. Results of this study are very encouraging for hybrid MOCVD/ALE growth of In-based compounds.
引用
收藏
页码：265 / 268
页数：4
相关论文
共 50 条
  • [1] Incorporation of indium and gallium in atomic layer epitaxy of InGaAs on InP substrates
    Huang, Yong
    Ryou, Jae-Hyun
    Dupuis, Russell D.
    JOURNAL OF CRYSTAL GROWTH, 2011, 321 (01) : 60 - 64
  • [2] Atomic layer epitaxy of copper on tantalum
    Martensson, P
    Carlsson, JO
    CHEMICAL VAPOR DEPOSITION, 1997, 3 (01) : 45 - 50
  • [3] Mechanism of atomic layer epitaxy of AlAs
    Hirose, S
    Yamaura, M
    Yoshida, A
    Ibuka, H
    Hara, K
    Munekata, H
    JOURNAL OF CRYSTAL GROWTH, 1998, 194 (01) : 16 - 24
  • [4] Atomic layer epitaxy of MnAs on GaAs(001)
    Ozeki, M.
    Haraguchi, T.
    Fujita, A.
    JOURNAL OF CRYSTAL GROWTH, 2007, 298 (SPEC. ISS) : 90 - 93
  • [5] A NOVEL ATOMIC LAYER EPITAXY METHOD OF SILICON
    IMAI, S
    TAKAGI, S
    SUGIURA, O
    MATSUMURA, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (12B): : 3646 - 3651
  • [6] Physical principles of ultrahigh vacuum atomic layer epitaxy
    Herman, MA
    APPLIED SURFACE SCIENCE, 1997, 112 : 1 - 11
  • [7] DIMETHYLAMINE AS A CARBON REMOVER IN ATOMIC LAYER EPITAXY OF ALAS
    HIROSE, S
    KANO, N
    DEURA, M
    HARA, K
    MUNEKATA, H
    KUKIMOTO, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1995, 34 (11A): : L1436 - L1438
  • [8] Effects of active hydrogen on atomic layer epitaxy of GaAs
    Meguro, T
    Isshiki, H
    Lee, JS
    Iwai, S
    Aoyagi, Y
    APPLIED SURFACE SCIENCE, 1997, 112 : 118 - 121
  • [9] Atomic-layer epitaxy of silicon on (100) surface
    Satoh, Y
    Ikeda, K
    Sugahara, S
    Matsumura, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (10): : 5732 - 5736
  • [10] ATOMIC LAYER EPITAXY OF NITROGEN-DOPED ZNSE
    TAKEMURA, Y
    KONAGAI, M
    YAMASAKI, K
    LEE, CH
    TAKAHASHI, K
    JOURNAL OF ELECTRONIC MATERIALS, 1993, 22 (05) : 437 - 440
12345