ELECTRICAL CHARACTERISTICS OF METAL-SEMICONDUCTOR JUNCTIONS

被引：0
|
作者：
SCHNEIDER, MV
机构：
[1] Crawford Hill Laboratory, Bell Laboratories, Holmdel,NJ,07733, United States
来源：
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1980年 / 28卷 / 11期
关键词：
Applied voltages - Current flows - Current-voltage characteristics - Electrical characteristic - Exponentials - Harmonic frequency - Metal-semiconductor junctions - Simple++;
D O I：
10.1109/TMTT.1980.9577040
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The current-voltage characteristic of metal-semiconductor junctions is described by a simple equation which is the product of an exponential and a hyperbolic sine function if one includes the effect of tunneling. In the case of equal current flow via tunneling and via thermionic emission the conductance becomes a hyperbolic cosine function of the applied voltage. Devices displaying such characteristics appear attractive for use in harmonic frequency converters. © 1963-2012 IEEE.
引用
收藏
页码：1169 / 1173
页数：5
相关论文
共 50 条
  • [31] Simulation and experimental studies of electrical characteristics of nano metal-semiconductor interfaces
    Alkindi, Fatmah
    Patole, Shashikant P.
    Barada, Hassan
    Rezeq, Moh'd
    2019 IEEE 62ND INTERNATIONAL MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS (MWSCAS), 2019, : 1127 - 1130
  • [32] THE EFFECTS OF IMPURITY BANDS ON THE ELECTRICAL CHARACTERISTICS OF METAL-SEMICONDUCTOR OHMIC CONTACTS
    LOU, YS
    WU, CY
    SOLID-STATE ELECTRONICS, 1995, 38 (01) : 163 - 169
  • [33] Graphene for True Ohmic Contact at Metal-Semiconductor Junctions
    Byun, Kyung-Eun
    Chung, Hyun-Jong
    Lee, Jaeho
    Yang, Heejun
    Song, Hyun Jae
    Heo, Jinseong
    Seo, David H.
    Park, Seongjun
    Hwang, Sung Woo
    Yoo, InKyeong
    Kim, Kinam
    NANO LETTERS, 2013, 13 (09) : 4001 - 4005
  • [34] ZERO BIAS ANOMALIES IN METAL-SEMICONDUCTOR TUNNEL JUNCTIONS
    WOLF, EL
    LOSEE, DL
    SOLID STATE COMMUNICATIONS, 1969, 7 (09) : 665 - &
  • [35] ACCURACY OF WKB APPROXIMATION FOR TUNNELING IN METAL-SEMICONDUCTOR JUNCTIONS
    PADOVANI, FA
    STRATTON, R
    APPLIED PHYSICS LETTERS, 1968, 13 (05) : 167 - &
  • [36] EFFECT OF TRAPPING STATES ON TUNNELING IN METAL-SEMICONDUCTOR JUNCTIONS
    PARKER, GH
    MEAD, CA
    APPLIED PHYSICS LETTERS, 1969, 14 (01) : 21 - &
  • [37] INFLUENCE OF ION BOMBARDMENT ON TENNEL METAL-SEMICONDUCTOR JUNCTIONS
    SCHREDER, G
    GUETIN, P
    REVUE DE PHYSIQUE APPLIQUEE, 1970, 5 (06): : 905 - &
  • [38] MINORITY-CARRIER TRANSPORT IN METAL-SEMICONDUCTOR JUNCTIONS
    CALZOLARI, PU
    GRAFFI, S
    SOLID-STATE ELECTRONICS, 1973, 16 (12) : 1501 - 1503
  • [39] Specific contact resistance measurements of metal-semiconductor junctions
    Stavitski, N.
    Van Dal, M. J. H.
    Wolters, R. A. M.
    Kovalgin, A. Y.
    Schmitz, J.
    ICMTS 2006: PROCEEDINGS OF THE 2006 INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES, 2006, : 13 - +
  • [40] SCALE DEPENDENCE OF RESISTANCE FLUCTUATIONS AT METAL-SEMICONDUCTOR JUNCTIONS
    BOUDVILLE, WJ
    MCGILL, TC
    JOURNAL OF APPLIED PHYSICS, 1988, 63 (10) : 5009 - 5014
12345