ELECTRONIC-STRUCTURE AND HOLE DISTRIBUTION IN CUO2 PLANE OF HTSC

被引：1
|
作者：
ADAMOWICZ, L
PONDO, A
机构：
[1] Institute of Physics, Warsaw University of Technology
来源：
PHYSICA C | 1992年 / 192卷 / 3-4期
关键词：
D O I：
10.1016/0921-4534(92)90855-7
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The extended three-band Hubbard model has been used to calculate the population of Cu and O atomic sites by the doping-induced holes. Total and projected partial densities of states were examined for a wide range of model parameters. Strong enhancement of the density of states near the Fermi level has been obtained. The localization of holes on Cu sites is connected with the increase of mobile holes which accumulate mainly on O sites.
引用
收藏
页码：467 / 472
页数：6
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