A TANH SUBSTITUTION TECHNIQUE FOR THE ANALYSIS OF ABRUPT AND GRADED INTERFACE MULTILAYER DIELECTRIC STACKS

被引：48

作者：

CORZINE, SW ^{[1
]}

YAN, RH ^{[1
]}

COLDREN, LA ^{[1
]}

机构：

[1] AT&T BELL LABS,HOLMDEL,NJ 07733

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1991年 / 27卷 / 09期

关键词：

D O I：

10.1109/3.135163

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, we report a new analytical technique for estimating the peak reflectivity of lossless dielectric stacks with combinations of quarter and/or half-wave thicknesses. A simple variable substitution is used to transform the standard formula for the reflectivity of a Fabry-Perot resonator into a remarkably simplified form. The resulting expressions for reflectivity are intuitively appealing, allowing one to use additive algebra to calculate the peak reflectivity of a multilayer dielectric stack. The ability to treat graded interface dielectric stacks is also made possible with the present formalism.

引用

页码：2086 / 2090

页数：5