ACCURATE LARGE-SIGNAL MOS TRANSISTOR MODEL FOR USE IN COMPUTER-AIDED DESIGN

被引：116

作者：

MERCKEL, G

BOREL, J

CUPCEA, NZ

机构：

来源：

关键词：

D O I：

10.1109/T-ED.1972.17474

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：681 / +

页数：1

共 11 条

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[2] DRIFT VELOCITY SATURATION IN MOS TRANSISTORS
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BENEKING, H
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (06) : 481 - +
[3] KIRK CT, 1962, IRE T ELECTRON DEV, V9, P164
[4] MERCKEL G, 1970, 633 LAB EL TECHN INF
[5] MERCKEL G, 1971, J ETUDES DGRST MODEL
[6] MERCKEL G, 1970, COLL INT MICROELECTR, V1
[7] MERCKEL G, 1970, LETIME604 LAB EL TEC
[8] MERCKEL G, 1970, COLL INT MICROELECTR
[9] SOURCE TO DRAIN RESISTANCE BEYOND PINCH-OFF IN METAL-OXIDE-SEMICONDUCTOR TRANSISTORS (MOST)
REDDI, VGK
SAH, CT
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (03) : 139 - +
[10] EFFECTIVE CARRIER MOBILITY IN SURFACE-SPACE CHARGE LAYERS
SCHRIEFFER, JR
[J]. PHYSICAL REVIEW, 1955, 97 (03): : 641 - 646