GROWTH AND CHARACTERIZATION OF ALAS/INAS SUPERLATTICES ON (100), (211) AND (311) GAAS SUBSTRATES

被引：1
|
作者：
CASTRILLO, P [1 ]
ARMELLES, G [1 ]
DOMINGUEZ, PS [1 ]
MELENDEZ, J [1 ]
BRIONES, F [1 ]
PLOOG, K [1 ]
机构：
[1] MAX PLANCK INST FESTKORPERFORSCH,W-7000 STUTTGART 80,GERMANY
来源：
SURFACE SCIENCE | 1992年 / 267卷 / 1-3期
关键词：
D O I：
10.1016/0039-6028(92)91165-8
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
AlAs/InAs strained layer superlattices have been grown pseudomorphically on {100}, {311} and {211} GaAs substrates by atomic layer molecular beam epitaxy. Optical characterization has been performed by piezoreflectance and Raman spectroscopies. A two coupled modes linear chain model has been developed for {xi-11} (xi = 2, 3) superlattices phonon modes calculation taking into account the effect of strain. Phonon modes calculations for the {311} AlAs/InAs superlattice are in very good agreement with the experimental Raman results.
引用
收藏
页码：413 / 417
页数：5
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