GROWTH AND CHARACTERIZATION OF ALAS/INAS SUPERLATTICES ON (100), (211) AND (311) GAAS SUBSTRATES

被引：1
|
作者：
CASTRILLO, P [1 ]
ARMELLES, G [1 ]
DOMINGUEZ, PS [1 ]
MELENDEZ, J [1 ]
BRIONES, F [1 ]
PLOOG, K [1 ]
机构：
[1] MAX PLANCK INST FESTKORPERFORSCH,W-7000 STUTTGART 80,GERMANY
来源：
SURFACE SCIENCE | 1992年 / 267卷 / 1-3期
关键词：
D O I：
10.1016/0039-6028(92)91165-8
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
AlAs/InAs strained layer superlattices have been grown pseudomorphically on {100}, {311} and {211} GaAs substrates by atomic layer molecular beam epitaxy. Optical characterization has been performed by piezoreflectance and Raman spectroscopies. A two coupled modes linear chain model has been developed for {xi-11} (xi = 2, 3) superlattices phonon modes calculation taking into account the effect of strain. Phonon modes calculations for the {311} AlAs/InAs superlattice are in very good agreement with the experimental Raman results.
引用
收藏
页码：413 / 417
页数：5
相关论文
共 50 条
  • [1] InAs and (In,Mn)As nanostructures grown on GaAs(100), (211)B, and (311)B substrates
    Guo, SP
    Shen, A
    Matsukura, F
    Ohno, Y
    Ohno, H
    JOURNAL OF CRYSTAL GROWTH, 1999, 201 : 684 - 688
  • [2] Phonon-plasmon interaction in tunnelling GaAs/AlAs superlattices grown on (311) and (100) substrates
    Efremov, MD
    Volodin, VA
    Sachkov, VA
    Preobrazhenski, VV
    Semyagin, BR
    Ledentsov, NN
    Ustinov, VM
    Litvinov, D
    Gerthsen, D
    GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY, 2002, 82-84 : 581 - 586
  • [3] Exciton localization in corrugated GaAs/AlAs superlattices grown on (311) GaAs substrates
    Xu, Z. Y.
    Yuan, Z. L.
    Xu, J. Z.
    Zheng, B. Z.
    Physical Review B: Condensed Matter, 1995, 516
  • [4] EXCITON LOCALIZATION IN CORRUGATED GAAS/ALAS SUPERLATTICES GROWN ON (311) GAAS SUBSTRATES
    XU, ZY
    YUAN, ZL
    XU, JZ
    ZHENG, BZ
    WANG, BS
    JIANG, DS
    PHYSICAL REVIEW B, 1995, 51 (11): : 7024 - 7028
  • [5] InAs quantum dots and dashes grown on (100), (211)B, and (311)B GaAs substrates
    Guo, SP
    Shen, A
    Ohno, Y
    Ohno, H
    PHYSICA E, 1998, 2 (1-4): : 672 - 677
  • [6] Exciton localization in corrugated GaAs/AlAs superlattices grown on (311) GaAs substrates
    Xu, Z. Y.
    Yuan, Z. L.
    Xu, J. Z.
    Zheng, B. Z.
    Physical Review B: Condensed Matter, 51 (11):
  • [7] InAs quantum dots and dashes grown on (100), (211)B, and (311)B GaAs substrates
    Guo, S.P.
    Shen, A.
    Ohno, Y.
    Ohno, H.
    Physica E: Low-Dimensional Systems and Nanostructures, 1998, 2 (1-4): : 672 - 677
  • [8] Study of interface abruptness of molecular beam epitaxial GaAs/AlAs superlattices grown on GaAs(311) and (100) substrates
    Hsu, Y
    Wang, WI
    Kuan, TS
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (03): : 2286 - 2289
  • [9] Optical characterization of InAs monolayer quantum structures grown on (311)A, (311)B, and (100)GaAs substrates
    Xu, SJ
    Chua, SJ
    Zhang, X
    Zhang, ZH
    Luo, CP
    Yuan, ZL
    Xu, ZY
    Zhou, JM
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1997, 3 (02) : 471 - 474
  • [10] Optical characterization of InAs monolayer quantum structures grown on (311)A, (311)B, and (100) GaAs substrates
    Xu, S.J.
    Chua, S.J.
    Zhang, Xiong
    Zhang, Z.H.
    Luo, C.P.
    Yuan, Z.L.
    Xu, Z.Y.
    Zhou, J.M.
    IEEE Journal on Selected Topics in Quantum Electronics, 1997, 3 (02): : 471 - 474
12345